Non-contact grinding/thinning of silicon carbide wafer by
Single crystal silicon carbide (SiC), gallium nitride (GaN), and diamond are promising third-generation semiconductor materials to meet the challenges above. For example, SiC-based devices can considerably enhance energy efficiency while adapting to various harsh working conditions of high temperatures and corrosive environments owing to the excellent physical
3 Comments
Miftahul Jannat
July 02, 2021Provide a sample analysis report, and conduct a feasibility study and analysis based on the local environmental topography.
Eleanor Fant
Jan 14, 2022The entire team tactfully delivered a project of exceptional quality while staying on schedule & under budget.
Philippe Jenvrin
Oct 25, 2020We have been using it for a period of time, the quality of the product is very good, we will consider working together again.